IPT059N15N3ATMA1

IPT059N15N3ATMA1 is an OptiMOS™3 N-channel power MOSFET. Potential applications are forklift, light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car, Point-of-load (POL), telecom, efuse.

• Normal level, excellent gate charge xRDS(on) product (FOM)
• Very low on-resistance RDS (on), 175°C operating temperature, PG-HSOF-8 package
• Qualified according to JEDEC for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
• Less paralleling and cooling required, highest system reliability
• System cost reduction, enabling very compact design
• Drain-source on-state resistance is 5.9mohm at VGS=10V, ID=150A
• Diode continuous forward current is 155A at TC=25°C
• Drain-source breakdown voltage is 150V at VGS=0V, ID=1mA

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.