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| 수량 | 가격 |
|---|---|
| 1+ | ₩11,552 |
| 10+ | ₩9,030 |
| 25+ | ₩8,321 |
| 50+ | ₩8,057 |
| 100+ | ₩7,792 |
| 250+ | ₩7,520 |
| 500+ | ₩7,325 |
제품 정보
제품 개요
The IR2213SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 1200V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage
- DV/DT Immune
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
- 3.3V Logic compatible
- Logic and power ground ±5V offset
애플리케이션
Industrial, Alternative Energy, Power Management
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
2Channels
High Side and Low Side
16Pins
Surface Mount
2A
12V
-
280ns
-
MSL 3 - 168 hours
-
MOSFET
SOIC
Non-Inverting
2.5A
20V
125°C
225ns
-
No SVHC (25-Jun-2025)
관련 제품
1개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
제품 준수 증명서
