
입고 시 알림 요청
| 포장 유형 | 수량 | 단가: | 총계 |
|---|---|---|---|
| 컷 테이프 | 5 | ₩4,823 | ₩24,115 |
| 총계 가격 | ₩24,115 | ||
| 수량 | 가격 |
|---|---|
| 5+ | ₩4,823 |
| 50+ | ₩4,406 |
| 250+ | ₩4,003 |
| 1000+ | ₩3,744 |
| 2000+ | ₩3,720 |
제품 정보
제품 개요
IRL7472L1TRPBF is a 40V single N-channel StrongIRFET™ power MOSFET in a DirectFET™ L8 package. It is optimized for low RDS(on) and high current capability. The device is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Application includes brushed motor drive applications, BLDC Motor drive applications, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, DC/AC inverters.
- Optimized for logic level drive
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dv/dt and di/dt capability
- Drain-to-source breakdown voltage is 40V min (VGS = 0V, ID = 250µA, TJ = 25°C)
- Breakdown voltage temp. coefficient is 30mV/°C typ (25°C, ID = 5.0m)
- Static drain-to-source on-resistance is 0.34mohm typ (VGS = 10V, ID = 195A, TJ = 25°C)
- Gate threshold voltage range from 1.0 to 2.5V (VDS = VGS, ID = 250µA, TJ = 25°C)
- Internal gate resistance is 1.0 ohm typ (TJ = 25°C)
- Direct FET large can (L8) package, operating junction range from -55 to + 175°C
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
N Channel
375A
DirectFET L8
10V
341W
175°C
-
No SVHC (25-Jun-2025)
40V
450µohm
Surface Mount
1.7V
11Pins
-
MSL 1 - Unlimited
IRL7472L1TRPBF의 대체 제품
2개 제품을 찾았습니다.
관련 제품
2개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Mexico
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
제품 준수 증명서
