IRLML5203TRPBF

The IRLML5203PBF is -30V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching, as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications like battery management, portable electronics, PCMCIA cards and ideal for applications where printed circuit board space is at a premium.

• Drain to source voltage (Vds) of -30V
• Gate to source voltage of ±20V
• On resistance Rds(on) of 98mohm at Vgs -10V
• Power dissipation Pd of 1.25W at 25°C
• Continuous drain current Id of -3A at vgs -10V and 25°C
• Operating junction temperature range from -55°C to 150°C

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.