IRLML6402TRPBF

The IRLML6402PBF is -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications such as battery and load management, portable electronics and PCMCIA cards and printed circuit board where space is at a premium.

• Drain to source voltage (Vds) of -20V
• Gate to source voltage of ±12V
• On resistance Rds(on) of 80mohm at Vgs -2.5V
• Power dissipation Pd of 1.3W at 25°C
• Continuous drain current Id of -3.7A at Vgs -4.5V and 25°C
• Operating junction temperature range from -55°C to 150°C
• 0.01W/°C linear derating factor

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