
5,000 지금 제품을 예약하실 수 있습니다
| 포장 유형 | 수량 | 단가: | 총계 |
|---|---|---|---|
| 컷 테이프 | 5 | ₩2,917 | ₩14,585 |
| 총계 가격 | ₩14,585 | ||
| 수량 | 가격 |
|---|---|
| 5+ | ₩2,917 |
| 50+ | ₩2,697 |
| 100+ | ₩2,477 |
| 500+ | ₩2,396 |
| 1000+ | ₩2,348 |
제품 정보
제품 개요
IRS21864STRPBF is a high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channel. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10V to 20V
- Undervoltage lockout for both channels
- 3.3V and 5V logic compatible rage
- Matched propagation delay for both channels
- Logic and power ground +/- 5V offset
- Lower di/dt gate driver for better noise immunity
- SO14N package, ambient temperature range from -40 to 125°C
기술 사양
2Channels
High Side and Low Side
14Pins
Surface Mount
4A
10V
-40°C
170ns
-
MSL 2 - 1 year
-
IGBT, MOSFET
NSOIC
Non-Inverting
4A
20V
125°C
170ns
-
No SVHC (25-Jun-2025)
기술 문서 (1)
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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