IXYX110N120A4

IXYX110N120A4 is an XPT™ ultra-low-Vsat PT IGBT for up to 5kHz switching. Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, this device helps to reduce gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities, and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Typical applications include battery chargers, lamp ballasts, power inverters, uninterruptible power supplies (UPS), and welding machines.

• Ideal for high power density and high inrush currents, low loss applications
• Hard-switching capable, easy paralleling of devices
• Reduced gate driver requirements
• Low on-state voltages Vcesat, positive thermal coefficient of Vcesat
• TO-247 PLUS package type
• 1200V VCES at TJ = 25°C to 175°C
• 375A Ic25 at TC= 25°C (chip capability)
• 1.13/10Nm/lb.in mounting torque
• Junction temperature range from -55°C to 175°C