더 필요하세요?
수량 | 가격 |
---|---|
5+ | ₩549 |
10+ | ₩408 |
100+ | ₩211 |
500+ | ₩171 |
2000+ | ₩158 |
6000+ | ₩144 |
16000+ | ₩130 |
30000+ | ₩117 |
제품 정보
제품 개요
The 2N7000TA is a N-channel enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers and other switching applications.
- Fast switching
- Lower input capacitance
- Extended safe operating area
- Improved inductive ruggedness
- Improved high temperature reliability
애플리케이션
Power Management, Motor Drive & Control, Industrial
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
N Channel
200mA
TO-226AA
10V
400mW
150°C
-
No SVHC (27-Jun-2024)
60V
5ohm
Through Hole
3.9V
3Pins
-
-
2N7000TA의 대체 제품
4개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
제품 준수 증명서