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FDC6301N..
Dual MOSFET, N Channel, 25 V, 220 mA, 5 ohm
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제품 정보
제조업체ONSEMI
제조업체 부품 번호FDC6301N..
주문 코드1700673RL
기술 데이터 시트
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id220mA
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)5ohm
Continuous Drain Current Id N Channel220mA
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel5ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max850mV
No. of Pins6Pins
Power Dissipation Pd900mW
Power Dissipation N Channel900mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
제품 개요
The FDC6301N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. It is very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this N-channel FET's can replace several digital transistors, with a variety of bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
- -0.5 to 8V Gate to source voltage
- 0.22A Continuous drain/output current
- 0.5A Pulsed drain/output current
애플리케이션
Industrial, Power Management
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
220mA
On Resistance Rds(on)
5ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
5ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
850mV
Power Dissipation Pd
900mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
220mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
기술 문서 (1)
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:United States
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:United States
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000091