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FDG6301N
Dual MOSFET, N Channel, 25 V, 220 mA, 4 ohm
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제품 정보
제조업체ONSEMI
제조업체 부품 번호FDG6301N
주문 코드1471045RL
기술 데이터 시트
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id220mA
Continuous Drain Current Id N Channel220mA
On Resistance Rds(on)4ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel4ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel-
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max850mV
Power Dissipation Pd300mW
No. of Pins6Pins
Power Dissipation N Channel300mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
제품 개요
The FDG6301N is a dual N-channel logic level enhancement-mode Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signals MOSFETs.
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
- Gate-source Zener for ESD ruggedness (<gt/>6kV human body model)
- Compact industry standard surface-mount-package
애플리케이션
Industrial, Power Management
기술 사양
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
220mA
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
4ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
850mV
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
220mA
On Resistance Rds(on)
4ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SC-70
Power Dissipation Pd
300mW
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
관련 제품
1개 제품을 찾았습니다.
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000001