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FDG6335N
Dual MOSFET, N Channel, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm
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제품 정보
제조업체ONSEMI
제조업체 부품 번호FDG6335N
주문 코드2453408RL
기술 데이터 시트
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id700mA
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.18ohm
Continuous Drain Current Id N Channel700mA
Continuous Drain Current Id P Channel700mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.18ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.18ohm
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max1.1V
No. of Pins6Pins
Power Dissipation Pd300mW
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
제품 개요
The FDG6335N is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package. It is suitable for use with DC-to-DC converters and load switch applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Compact industry standard surface-mount-package
- ±12V Gate to source voltage
- 0.7A Continuous drain current
- 2.1A Pulsed drain current
애플리케이션
Industrial, Power Management
기술 사양
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
700mA
On Resistance Rds(on)
0.18ohm
Continuous Drain Current Id P Channel
700mA
Drain Source On State Resistance N Channel
0.18ohm
Drain Source On State Resistance P Channel
0.18ohm
Gate Source Threshold Voltage Max
1.1V
Power Dissipation Pd
300mW
Power Dissipation P Channel
300mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
700mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SC-70
No. of Pins
6Pins
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000097