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수량 | 가격 |
---|---|
1+ | ₩2,004 |
10+ | ₩1,488 |
제품 정보
제품 개요
The FDMS86101 is a 100V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- 100% UIL tested
- 100% Rg tested
- Advance package and silicon combination for low RDS (ON) and high efficiency
기술 사양
N Channel
60A
Power 56
10V
104W
150°C
-
Lead (27-Jun-2024)
100V
0.0063ohm
Surface Mount
2.9V
8Pins
-
MSL 1 - Unlimited
관련 제품
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법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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