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수량 | 가격 |
---|---|
1+ | ₩9,512 |
10+ | ₩5,664 |
100+ | ₩5,551 |
500+ | ₩5,438 |
1000+ | ₩5,325 |
제품 정보
제품 개요
The HGTG11N120CND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
- 340ns at TJ = 150°C Fall time
기술 사양
43A
298W
TO-247
150°C
-
Lead (27-Jun-2024)
2.4V
1.2kV
3Pins
Surface Mount
-
관련 제품
3개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
제품 준수 증명서