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NDC7003P
Dual MOSFET, P Channel, 60 V, 60 V, 340 mA, 340 mA, 1.2 ohm
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제품 정보
제조업체ONSEMI
제조업체 부품 번호NDC7003P
주문 코드2454057RL
기술 데이터 시트
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id340mA
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)1.2ohm
Continuous Drain Current Id N Channel340mA
Continuous Drain Current Id P Channel340mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1.2ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel1.2ohm
Gate Source Threshold Voltage Max1.9V
Transistor Case StyleSOT-23
No. of Pins6Pins
Power Dissipation Pd960mW
Power Dissipation N Channel960mW
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
제품 개요
The NDC7003P is a PowerTrench® dual P-channel MOSFET produced using Trench technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage applications requiring a low current high side switch.
- Low gate charge
- Fast switching speed
- High performance Trench technology for low RDS (ON)
- Small footprint
- Low profile
애플리케이션
Industrial, Power Management
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
340mA
On Resistance Rds(on)
1.2ohm
Continuous Drain Current Id P Channel
340mA
Drain Source On State Resistance N Channel
1.2ohm
Drain Source On State Resistance P Channel
1.2ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
960mW
Power Dissipation P Channel
960mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
340mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.9V
No. of Pins
6Pins
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000033