NTR1P02LT3G

NTR1P02LT3G is a P Channel, -20V, -1.3A, 0.14ohm, power MOSFET. This miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are DC-DC converters and power management in portable and battery powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

• Low RDS(on) provides higher efficiency and extends battery life
• Drain to source breakdown voltage is -20V min
• Zero gate voltage drain current is -1µA at (VDS = -16V, VGS = 0V)
• Gate threshold voltage is -1.25V
• 225pF input capacitance at VDS = -5V
• 7/18ns turn-on/off delay time, 15/9ns rise/fall time (VGS=-4.5V, VDD=-5V, ID=-1A, RL=5ohm, RG=6ohm)
• Thermal resistance junction to ambient (RJA) is 300°C/W
• 400mW total power dissipation at TA = 25°C
• 3-pin SOT-23 package saves board space
• Operating and storage temperature (TJ, Tstg) range from - 55 to 150°C