제품 정보
제품 개요
The RFD14N05LSM9A is a N-channel logic level Power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3 to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
- Temperature compensating PSPICE® model
- Can be driven directly from CMOS, NMOS and TTL circuits
- Peak current vs. pulse width curve
- UIS Rating curve
애플리케이션
Power Management, Motor Drive & Control, Industrial
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
N Channel
14A
TO-252AA
5V
48W
175°C
-
50V
0.1ohm
Surface Mount
2V
3Pins
-
Lead (27-Jun-2024)
RFD14N05LSM9A의 대체 제품
5개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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