MUN5213DW1T1G

MUN5213DW1T1G is a MUN5213DW1 series NPN transistor with a monolithic bias resistor network, and dual NPN bias resistor transistor. It is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

• Simplifies circuit design, reduces board space, reduces component count
• Collector-base voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
• Collector-emitter voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
• Collector current - continuous is 100mAdc max (TA = 25°C, common for Q1 and Q2)
• Input forward voltage is 40VDC max (TA = 25°C, common for Q1 and Q2)
• Input reverse voltage is 10VDC max (TA = 25°C, common for Q1 and Q2)
• Total device dissipation is 187mW max (TA = 25°C)
• DC current gain is 140 (IC = 5.0mA, VCE = 10V, TA = 25°C)
• Input resistor range from 32.9 to 61.1kohm (TA = 25°C, common for Q1 and Q2)
• SOT-363 package, junction temperature range from -55 to +150°C