2SK2225-80-E#T2

2SK2225-80-E#T2 is a high-speed power switching MOSFET.

• High speed switching, low drive current
• Quality grade: standard
• Drain to source breakdown voltage is 1500V min at ID = 10mA, VGS = 0, Ta = 25°C
• Gate to source leak current is ±1µA max at VGS = ±20V, VDS = 0, Ta = 25°C
• Static drain to source on state resistance is 12ohm max at ID = 1A, VGS = 15V, Ta = 25°C
• Rise/fall time is 50ns typ at ID = 1A, VGS = 10V, RL = 30 ohm, Ta = 25°C
• Body-drain diode forward voltage is 0.9V typ at IF = 2A, VGS = 0, Ta = 25°C
• Body-drain diode reverse recovery time is 1750ns typ at IF=2A, VGS=0, diF/dt = 100A/µs,Ta=25°C
• TO-3PF package
• Channel temperature is 150°C