입고 시 알림 요청
수량 | 가격 |
---|---|
1+ | ₩10,223 |
10+ | ₩5,983 |
100+ | ₩5,907 |
500+ | ₩5,831 |
1000+ | ₩5,755 |
제품 정보
제품 개요
The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages.
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
650V
650V
28.5nC
3 Pin
Through Hole
No SVHC (21-Jan-2025)
Dual Common Cathode
20A
TO-247
175°C
-
관련 제품
1개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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