SIDR870ADP-T1-GE3

SIDR870ADP-T1-GE3 is a N-channel (D-S) MOSFET. Application includes synchronous rectification, primary side switch, DC/DC converters, OR-ing, power supplies, motor drive control, battery and load switch.

• TrenchFET® power MOSFET
• Top side cooling feature provides additional venue for thermal transfer
• 100% Rg and UIS tested
• Drain-source breakdown voltage is 100V (min, VGS = 0V, ID = 250μA, TJ = 25°C)
• VDS temperature coefficient is 56mV/°C (typ, ID = 250μA, TJ = 25°C)
• Gate-source threshold voltage range from 1.5 to 3V (VDS = VGS, ID = 250μA)
• Zero gate voltage drain current is 1μA (min, VDS = 100V, VGS = 0V)
• Forward transconductance is 68S (typ, VDS = 10V, ID = 20A, TJ = 25°C)
• Output capacitance is 719pF (typ, VDS = 50V, VGS = 0V, f = 1MHz)
• PowerPAK SO-8DC package, operating junction and storage temperature range from -55 to +150°C