SIHH070N60EF-T1GE3

SIHH070N60EF-T1GE3 is an EF series power MOSFET with fast body diode. It features the 4th generation E series technology. Application includes server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), high-intensity discharge (HID), fluorescent ballast lighting (lighting), welding, induction heating, motor drives, battery chargers and solar (PV inverters) (industrial).

• Low figure-of-merit (FOM) Ron x Qg, low effective capacitance (Co(er))
• Reduced switching and conduction losses, avalanche energy rated (UIS)
• Maximum power dissipation is 202W (TC = 25°C)
• Gate-source threshold voltage range from 3 to 5V (TJ = 25°C, VDS = VGS, ID = 250μA)
• Drain-source breakdown voltage is 600V (VGS = 0V, ID = 250μA, TJ = 25°C)
• Continuous drain current (TJ = 150 °C) is 36A (TC = 25°C, VGS at 10V)
• Turn-on delay time is 36ns, fall time is 38ns (typ, VDD = 480V, ID = 15A, VGS = 10V, Rg = 9.1ohm)
• Diode forward voltage is 1.2V (TJ = 25 °C, IS = 15A, VGS = 0V)
• PowerPAK 8 x 8 package, operating junction and storage temperature range from -55 to +150°C

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