WG30N65HAW1Q

WG30N65HAW1Q is an IGBT. It uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode to provide extremely low VCE(sat), and excellent switching performance. This device offers best-in class efficiency in hard switching and resonant topology. Typical applications include PFC, solar converters, UPS, welding converters, mid to high range switching frequency converters.

• Positive temperature efficient for easy paralleling
• Very soft, fast recovery anti-parallel diode
• High switching speed, EMI improved design
• Collector-emitter breakdown voltage is 650V min at VGE = 0V; IC = 1mA
• Diode forward voltage is 1.9V typ at VGE = 0V; IF = 10A; Tj = 25°C
• Zero gate voltage collector current is 100μA max at VCE = 650V; VGE = 0V; Tj = 25°C
• Gate charge is 74nC typ at VCC = 520V; IC = 30A; VGE = 15V;Tj = 25°C
• Turn-off delay time is 120nS typ at Tj = 25°C;VCC = 400V; IC = 30A; VGE = 15V / 0V;RG = 10 ohm
• TO247 package
• Maximum operating junction temperature is 175°C