ADL8121ACPZN

ADL8121ACPZN is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.025GHz to 12GHz. The ADL8121 provides a typical gain of 16.5dB, a 2.5dB typical noise figure, and a typical output third-order intercept (OIP3) of 36dBm across the 0.025GHz to 10GHz frequency range, requiring only 95mA from a 5V supply voltage. The saturated output power (PSAT) of 21.5dBm typical across the 0.025GHz to 10GHz frequency range enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase and quadrature (I/Q) or image rejection mixers. Applications include test instrumentation, military communications, military radar, telecommunications.

• Single positive supply (self biased)
• Frequency range from 0.025 to 10GHz
• Gain is 16.5dB typical at (TA = 25°C)
• Noise figure is 2.5dB typical at (TA = 25°C)
• Input return loss is 12dB typical at (TA = 25°C)
• Power for 1dB compression is 21dBm typical at (TA = 25°C)
• OIP3 is 36dBm typical at (measurement taken at output power (POUT) per tone = 5dBm)
• IDQ current is 95mA typical at (TA = 25°C)
• Second-order intercept is 40dBm typical at (measurement taken at POUT per tone = 5dBm)
• Operating temperature range from -40°C to +85°C, 6-lead LFCSP package

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