ADL8142ACPZN

ADL8142ACPZN is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23GHz to 31GHz. It provides a typical gain of 27dB, a 1.6dB typical noise figure, and a typical output third-order intercept (OIP3) of 21.5dBm at 27GHz to 31GHz, requiring only 25mA from a 2V supply voltage. Note that the OIP3 can be improved with larger drain currents. The ADL8142 also features inputs and outputs that are ac-coupled and internally matched to 50 ohm, making it ideal for high-capacity microwave radio applications. It is also used in applications such as satellite communication, telecommunications, civilian radar.

• Single positive supply (self biased)
• Frequency range from 23 to 27GHz
• Gain is 29dB typical at (TC = 25°C, 23 to 27GHz frequency range)
• Noise figure is 1.8dB typical at (TC = 25°C, 23 to 27GHz frequency range)
• Input return loss is 10.5dB typical at (TC = 25°C, 23 to 27GHz frequency range)
• Power for 1dB compression (P1dB) is 8.5dBm typ at (TC = 25°C, 23 to 27GHz frequency range)
• Saturated power (PSAT) is 10dBm typical at (TC = 25°C, 23 to 27GHz frequency range)
• IP3 is 17.5dBm typical at (measurement taken at output power (POUT) per tone = -4dBm)
• Power added efficiency is 18% typical at (measured at PSAT, TC = 25°C)
• Operating temperature range from -40°C to +85°C, 8-lead LFCSP package

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