ADPA7008AEHZ

ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). It is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring 31dBm of efficient PSAT. It requires 1500mA from a 5V supply voltage (VDD). The RF input and outputs are internally matched and dc blocked for ease of integration into higher level assemblies. It is widely used in application such as aerospace and defence, test instrumentation, communications etc.

• Saturated output power is 30dBm typical at (TA = 25°C, 20GHz to 22GHz)
• Gain is 17dB typical at (TA = 25°C, 20GHz to 22GHz)
• Output return loss is 12dB typical at (TA = 25°C, 20GHz to 22GHz)
• Input return loss is 14dB typical at (TA = 25°C, 20GHz to 22GHz)
• 50 ohm matched input and output
• Integrated power detector
• Operating temperature is -40°C to +85°C
• Package style is 18-terminal ceramic leadless chip carrier with heat sink [LCC-HS]

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