HMC386LP4E

HMC386LP4E are GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifier. Typical application includes low noise MMIC VCO w/buffer amplifier for wireless infrastructure, industrial controls, test equipment, military.

• No external resonator needed
• Frequency range from 2.6 to 2.8GHz (TA = +25°C, Vcc = +3V)
• Power output is 5dBm (typ, TA = +25°C, Vcc = +3V)
• SSB phase noise a 100KHz offset, Vtune= +5V at RFOUT is -114dBc/Hz (typ, TA = +25°C)
• Tune voltage range from 0 to 10V (TA = +25°C, Vcc = +3V)
• Supply current (Icc) (Vcc = +3V) is 35mA (typ, TA = +25°C, Vcc = +3V)
• Tune port leakage current is 10μA (max, TA = +25°C, Vcc = +3V)
• Output return loss is 9dB (typ, TA = +25°C, Vcc = +3V)
• Frequency drift rate is 0.3MHz/°C (typ, TA = +25°C, Vcc = +3V)
• 24 lead QFN package, operating temperature range from -40 to +85°C

메모

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party