HMC414MS8GE

HMC414MS8GE is a high efficiency GaAs InGaP heterojunction bipolar transistor (HBT) MMIC power amplifier which operate between 2.2 and 2.8GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20dB of gain, +30dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control. This amplifier is ideal for use as a power amplifier for 2.2 to 2.7GHz applications BLUETOOTH, MMDS.

• Power down capability, low external part count
• Frequency range from 2.2 to 2.8GHz (Vs = 3.6V, TA = +25°C)
• Gain is 20dB (typ, Vs = 3.6V, TA = +25°C)
• Gain variation over temperature is 0.03dB / °C (typ, Vs = 3.6V, TA = +25°C)
• Input return loss is 8dB (typ, Vs = 3.6V, TA = +25°C)
• Output return loss is 9dB and noise figure is 6.5dB (typ, Vs = 3.6V, TA = +25°C)
• Output power for 1dB compression (P1dB) is 25dBm (typ, Vs = 3.6V, TA = +25°C)
• Saturated output power is 27dBm (typ, Vs = 3.6V, TA = +25°C)
• Output third order intercept is 35dBm (typ, Vs = 3.6V, TA = +25°C)
• 8 pin MSOP-EP package, operating temperature range from -40 to +85°C

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