HMC739LP4E

HMC739LP4E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. The HMC739LP4(E) integrates a resonator, negative resistance device, varactor diode and divide-by-16 prescaler. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Typical application includes point-to-point radios, point-to-multi-point radios / LMDS, VSAT.

• No external resonator needed
• Frequency range from 23.8 to 26.8GHz (Fo, TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• Power output is 3dBm (min, RF OUT, TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• SSB phase noise at 100KHz offset, Vtune= +5V at RF output is -93dBc/Hz (typ, TA = +25°C)
• Tune voltage range from 1 to 13V (TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• Supply current is 200mA (typ, Icc (RF), Icc (DIG), TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• Tune port leakage current (Vtune= 13V) is 10µA (max, TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• Output return loss is 3dB (typ, TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• Frequency drift rate is 4MHz/°C (typ, TA = +25°C, Vcc(RF), Vcc(DIG) = +5V)
• 24 lead SMD package, operating temperature range from -40 to +85°C

메모

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party