제품 정보
제품 개요
LT8418ACBZ-R7 is a half-bridge GaN driver with a smart integrated bootstrap switch that integrates top and bottom driver stages, driver logic control, and protections. It can be configured into synchronous half-bridge, full-bridge topologies, or buck, boost, and buck-boost topologies. It also integrates a smart integrated bootstrap switch to generate a balanced bootstrap voltage from VCC with a minimum dropout voltage. It provides split gate drivers to adjust the turnon and turn-off slew rates of GaN FETs to suppress ringing and optimize EMI performance. All driver inputs and outputs have default low-state to prevent GaN FETs from false turn-on. The application includes high-frequency DC-DC switching power converters, half-bridge, full-bridge, push-pull converters, data centre power supplies, motor drivers, Class-D audio amplifiers, and consumer, industrial, and automotive.
- Operating voltage range from 3.85 to 5.5V (TA = 25°C, VCC = VBST = 5V, VGND = VSW = 0V)
- Quiescent current is 250µA typ (TA = 25°C, VCC = VBST = 5V, VGND = VSW = 0V)
- Smart integrated bootstrap switch, split-gate-driver to adjust turn-on/turn-off strength
- Default low-state for all driver inputs and outputs
- Independent INT, INB inputs with TTL logic compatible
- Undervoltage and overvoltage lockout protections
- Propagation delay matching is 1.5ns (typical)
- Operating current is 2.4mA typ (FSW = 400KHz, TA = 25°C)
- 12-Ball WLCSP package, operating temperature range from -40°C to 125°C
메모
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
기술 사양
1Channels
Half Bridge
12Pins
Surface Mount
4A
5.5V
-40°C
10ns
-
No SVHC (21-Jan-2025)
Isolated
GaN FET
WLCSP
TTL
8A
3.85V
125°C
10ns
-
기술 문서 (1)
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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