BSS123WQ-7-F

BSS123WQ-7-F is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include small servo motor controls, power MOSFET gate drivers, switching applications.

• Low gate threshold voltage, low input capacitance
• Fast switching speed, low input/output leakage
• High drain-source voltage rating, AEC-Q101 qualified, PPAP capable
• Drain-source voltage is 100V at TA=+25°C
• Continuous gate-source voltage is ±20V at TA=+25°C
• Pulsed drain current is 680mA at TA=+25°C
• Total power dissipation is 200mW at TA=+25°C
• Static drain-source on-resistance is 6ohm max at VGS=10V, ID=0.17A, TA=+25°C
• SOT323 package
• Operating and storage temperature range from -55 to +150°C

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.