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DMG1029SV-7
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 500 mA, 500 mA, 1.3 ohm
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제품 정보
제조업체DIODES INC.
제조업체 부품 번호DMG1029SV-7
주문 코드2543528RL
기술 데이터 시트
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id500mA
Continuous Drain Current Id N Channel500mA
On Resistance Rds(on)1.3ohm
Continuous Drain Current Id P Channel500mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1.3ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel1.3ohm
Gate Source Threshold Voltage Max2.5V
Transistor Case StyleSOT-563
Power Dissipation Pd450mW
No. of Pins6Pins
Power Dissipation N Channel450mW
Power Dissipation P Channel450mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
제품 개요
DMG1029SV-7 is a complementary pair enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include general-purpose interfacing switch, power management functions, analogue switch.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Ultra-small surface mount package
- Drain-source voltage is 60V at TA = +25°C, (P/N-channel)
- Continuous drain current is 500mA at TA = +25°C, steady state, VGS = 10V, (P/N-channel)
- Total power dissipation is 0.45W at TA = +25°C, (P/N-channel)
- Static drain-source on-resistance is 1.3ohm at VGS = 10V, ID = 500mA, (P/N-channel)
- SOT563 case
- Operating and storage temperature range from -55 to +150°C
기술 사양
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
500mA
Continuous Drain Current Id P Channel
500mA
Drain Source On State Resistance N Channel
1.3ohm
Drain Source On State Resistance P Channel
1.3ohm
Transistor Case Style
SOT-563
No. of Pins
6Pins
Power Dissipation P Channel
450mW
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
500mA
On Resistance Rds(on)
1.3ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
450mW
Power Dissipation N Channel
450mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
관련 제품
3개 제품을 찾았습니다.
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.005