DMN6075S-7

DMN6075S-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typical applications include backlighting, power management functions, DC-DC converters.

• Low input capacitance, low on-resistance
• Fast switching speed
• Drain-source voltage is 60V at TA=+25°C
• Gate-source voltage is ±20V at TA=+25°C
• Continuous drain current is 2A at TA=+25°C, VGS = 10V, steady state
• Maximum body diode forward current is 2A at TA = +25°C
• Pulsed drain current (10µs pulse, duty cycle = 1%) is 12A at TA = +25°C
• Static drain-source on-resistance is 85mohm max at VGS = 10V, ID = 3.2A, TA = +25°C
• SOT23 case
• Operating and storage temperature range from -55 to +150°C