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제품 정보
제조업체DIODES INC.
제조업체 부품 번호DMT6004LPS-13
주문 코드3518398
기술 데이터 시트
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id100A
Drain Source On State Resistance0.0025ohm
Transistor Case StylePowerDI 5060
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
제품 개요
DMT6004LPS-13 is a N-channel enhancement mode MOSFET in an 8 pin PowerDI5060 package. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include motor control, transformer driving switch, DC-DC converters, power management functions and uninterrupted power supply.
- Dain-source voltage is 60V
- Gate-source voltage is ±20V
- Pulsed drain current is 400A
- Total power dissipation is 2.5W(TA = +25°C)
- Low RDS(ON) ensures on-state losses are minimized
- Low Qg minimizes switching losses
- 100% unclamped inductive switching ensures more reliable and robust end application
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
PowerDI 5060
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
기술 문서 (1)
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:Lead (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000127