ZXM61P03F

ZXM61P03F is a P-channel enhancement mode MOSFET. It utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage, power management applications. Typical applications include DC - DC converters, power management functions, disconnect switches and motor control.

• Low on-resistance, fast switching speed
• Low gate drive, low threshold
• Drain-source voltage is -30V
• Gate-source voltage is ±20V
• Continuous drain current is -1.1A at TA=+25°C, VGS=-10V
• Drain-source breakdown voltage is -30V min at ID=-250µA, VGS=0V, Tamb = 25°C
• Gate-source threshold voltage is -1.0V min at ID=-250µA, VDS= VGS, Tamb = 25°C
• Static drain-source on-state resistance is 0.35ohm max at VGS=-10V, ID=-0.6A, Tamb = 25°C
• SOT23 package
• Operating and storage temperature range from -55 to +150°C