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ZXMC3A17DN8TA
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4.4 A, 4.4 A, 0.07 ohm
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제품 정보
제조업체DIODES INC.
제조업체 부품 번호ZXMC3A17DN8TA
주문 코드1471154RL
기술 데이터 시트
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id4.4A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.07ohm
Continuous Drain Current Id N Channel4.4A
Continuous Drain Current Id P Channel4.4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.07ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.07ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
Power Dissipation Pd2.1W
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
제품 개요
The ZXMC3A17DN8TA is a N/P-channel complementary enhancement-mode MOSFET utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. It is ideal for high efficiency, low voltage and LCD backlighting applications.
- Low ON-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- Low profile
애플리케이션
Industrial, Power Management, Motor Drive & Control
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
4.4A
On Resistance Rds(on)
0.07ohm
Continuous Drain Current Id P Channel
4.4A
Drain Source On State Resistance N Channel
0.07ohm
Drain Source On State Resistance P Channel
0.07ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
2.1W
Power Dissipation P Channel
2.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
4.4A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
관련 제품
3개 제품을 찾았습니다.
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (27-Jun-2024)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.00025