2EDB8259YXUMA1

2EDB8259YXUMA1 is an EiceDRIVER™ dual-channel isolated gate-driver IC designed to drive Si and SiC MOSFETs and GaN HEMTs power switches. It is suited for use in applications with higher bus voltage or higher pollution degree and, in general, can ease PCB routing. It offers optional shoot-through protection (STP) and dead-time control (DTC) functionality. This allows the operation as a dual-channel low-side, dual-channel high-side, or half-bridge gate driver with a configurable dead-time. With excellent CMTI, low part-to-part skew, and fast signal propagation, the products are best suited for use in fast-switching power conversion systems. Potential applications include server, telecom SMPS, EV off-board chargers, low-voltage drives and power tools, solar micro inverter, solar optimizer, industrial power supply (SMPS, residential UPS). Isolation and safety certificates include UL1577 with VISO = 3000VRMS (certification n.E311313), GB 4943.1-2022 (certification n. CQC23001416206).

• 2-channel isolated gate driver for Si and SiC MOSFETs and GaN HEMTs power switches
• Fast output clamping for VDDA/B < UVLO
• Fast UVLO recovery time (<2μs)
• Fully qualified for industrial applications
• IVDDI quiescent current is 1.67mA typ no switching, TJ = 25°C
• Input supply voltage at pin VDDI is 17V max at min. defined by UVLOVDDI
• Rise time is 7.5ns typ at CLOAD = 1.8nF
• Fall time is 6ns typ at CLOAD = 1.8nF
• DSO14-150mil package
• Ambient temperature range from -40 to 125°C