페이지 인쇄
AUIRF7343QTR
Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
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제조업체INFINEON
제조업체 부품 번호AUIRF7343QTR
주문 코드2803372RL
Product RangeHEXFET Series
AKAAUIRF7343QTR, SP001517450
기술 데이터 시트
제품 정보
제조업체INFINEON
제조업체 부품 번호AUIRF7343QTR
주문 코드2803372RL
Product RangeHEXFET Series
AKAAUIRF7343QTR, SP001517450
기술 데이터 시트
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds55V
Continuous Drain Current Id4.7A
Drain Source Voltage Vds P Channel55V
On Resistance Rds(on)0.043ohm
Continuous Drain Current Id N Channel4.7A
Continuous Drain Current Id P Channel4.7A
Drain Source On State Resistance N Channel0.043ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.043ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
제품 개요
- Automotive HEXFET® power MOSFET
- Automotive qualified
- Advanced planar technology
- Ultra-low on-resistance
- Logic level gate drive
- Dual N and P channel MOSFET
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
55V
Continuous Drain Current Id
4.7A
On Resistance Rds(on)
0.043ohm
Continuous Drain Current Id P Channel
4.7A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.043ohm
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
55V
Drain Source Voltage Vds P Channel
55V
Continuous Drain Current Id N Channel
4.7A
Drain Source On State Resistance N Channel
0.043ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000227