BGA7H1N6E6327XTSA1

BGA7H1N6E6327XTSA1 is a silicon germanium low noise amplifier for LTE which covers a wide frequency range from 2300MHz to 2690MHz. The LNA provides a 12.5dB gain and 0.60dB noise figure at a current consumption of 4.7mA. The BGA7H1N6 is based upon Infineon Technologies‘ B7HF Silicon germanium technology.

• Digital on/off switch (1V logic high level)
• B7HF silicon germanium technology, RF output internally matched to 50 ohm
• Only 1 external SMD component necessary, 2KV HBM ESD protection (including AI-pin)
• Supply voltage range from 1.5 to 3.3V (A = 25°C, VCC = 1.8V)
• Noise figure is 0.65dB (typ, ZS = 50 ohm, TA = 25°C)
• Reverse isolation is 20dB (typ, TA = 25°C, VCC = 1.8V)
• Stability is <gt/> 1 (typ, f= 20MHz to 10GHz, TA = 25°C)
• Ultra small TSNP-6-2 leadless package
• Ambient temperature range from -40 to 85°C

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.