페이지 인쇄
BSO220N03MDGXUMA1
Dual MOSFET, N Channel, 30 V, 30 V, 6 A, 6 A, 0.0183 ohm
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제품 정보
제조업체INFINEON
제조업체 부품 번호BSO220N03MDGXUMA1
주문 코드2432714RL
AKABSO220N03MD G, SP000447478
기술 데이터 시트
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id6A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6A
On Resistance Rds(on)0.0183ohm
Continuous Drain Current Id P Channel6A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0183ohm
Drain Source On State Resistance P Channel0.0183ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.1V
No. of Pins8Pins
Power Dissipation Pd1.4W
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
제품 개요
The BSO220N03MD G is a dual N-channel MOSFET optimized for 5V driver application (notebook, VGA and POL) and qualified for consumer level application. The ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages make OptiMOS™ power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in server, data-com and telecom applications.
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
6A
Continuous Drain Current Id N Channel
6A
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance N Channel
0.0183ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.1V
Power Dissipation Pd
1.4W
Power Dissipation P Channel
1.4W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.0183ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0183ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
기술 문서 (1)
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (21-Jan-2025)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000006