CY62138FV30LL-45ZXI

CY62138FV30LL-45ZXI is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Place the device into standby mode reducing power consumption when deselected. To write to the device, take chip enable and write enable inputs LOW. Data on the eight I/O pins is then written into the location specified on the address pins. To read from the device, take chip enable and output enable LOW while forcing write enable HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The eight input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled, or during a write operation.

• Very high speed: 45ns
• Wide voltage range from 2.2V to 3.6V
• Pin compatible with CY62138CV25/30/33
• Ultra-low standby power of standby current: 1µA(typical)
• Ultra low active power with typical active current: 1.6mA at f = 1MHz
• Easy memory expansion with active low CE1, CE2 and active low OE features
• Automatic power-down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• 90nm process technology
• Temperature range from –40°C to 85°C

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.