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수량 | 가격 |
---|---|
1+ | ₩9,296 |
10+ | ₩9,179 |
25+ | ₩9,061 |
50+ | ₩8,943 |
100+ | ₩8,825 |
250+ | ₩8,812 |
제품 정보
제품 개요
CY62148ELL-45ZSXI is a high performance CMOS static RAM organized as 512K words by 8-bits. This device features an advanced circuit design to provide ultra-low standby current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (active-low CE HIGH). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (active-low CE HIGH), outputs are disabled (active-low OE HIGH), or during an active write operation (active-low CE LOW and active-low WE LOW). It is suitable for interfacing with processors that have TTL I/P levels.
- Very high speed: 45ns
- Voltage range from 4.5V to 5.5V
- Pin compatible with CY62148B
- Maximum standby current is 7µA (industrial)
- Typical active current is 3.5mA at f = 1MHz
- Easy memory expansion with active-low CE, and active-low OE features
- Automatic power-down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
- 32-pin TSOP II package
- Industrial ambient temperature range from -40°C to +85°C
기술 사양
Asynchronous SRAM
512K x 8bit
32Pins
5.5V
-
-40°C
-
No SVHC (21-Jan-2025)
4Mbit
TSOP-II
4.5V
5V
Surface Mount
85°C
MSL 3 - 168 hours
기술 문서 (1)
CY62148ELL-45ZSXI의 대체 제품
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법률 및 환경
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RoHS
RoHS
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