240 지금 제품을 예약하실 수 있습니다
수량 | 가격 |
---|---|
1+ | ₩5,228 |
10+ | ₩3,907 |
100+ | ₩2,803 |
500+ | ₩2,600 |
1000+ | ₩2,396 |
제품 정보
제품 개요
The IHW15N120R3 is a 1200V Reverse Conducting IGBT with monolithic body diode. Powerful monolithic body diode with low forward voltage is designed for soft commutation only. TRENCHSTOP™ technology applications offers very tight parameter distribution and high ruggedness as well easy parallel switching capability due to positive temperature coefficient in VCE (sat). Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
- Excellent quality
- Lower EMI filtering requirements
- JESD-022 Qualified
- Lowest power dissipation
- Better thermal management
- Surge current capability
- Highest reliability against peak currents
애플리케이션
Power Management, Microwave, Alternative Energy
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
30A
254W
TO-247
175°C
-
No SVHC (21-Jan-2025)
1.7V
1.2kV
3Pins
Through Hole
-
IHW15N120R3FKSA1의 대체 제품
1개 제품을 찾았습니다.
관련 제품
4개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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