IPB027N10N3GATMA1

The IPB027N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.

• Excellent switching performance
• World's lowest RDS (ON)
• Very low Qg and Qgd
• Excellent gate charge x RDS (ON) product (FOM)
• Environmentally friendly
• Highest power density
• Less paralleling required
• Smallest board-space consumption
• Easy-to-design products
• Halogen-free, Green device
• MSL1 rated 2

애플리케이션

Power Management, Audio, Motor Drive & Control, Industrial, Automotive

경고

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.