더 필요하세요?
수량 | 가격 |
---|---|
1+ | ₩7,876 |
10+ | ₩5,499 |
100+ | ₩4,149 |
500+ | ₩4,023 |
1000+ | ₩3,896 |
제품 정보
제품 개요
The IPW65R095C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS™ quality
애플리케이션
Industrial, Power Management, Alternative Energy, Communications & Networking
메모
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
기술 사양
N Channel
24A
TO-247
10V
128W
150°C
-
No SVHC (21-Jan-2025)
650V
0.084ohm
Through Hole
3.5V
3Pins
-
-
기술 문서 (1)
IPW65R095C7XKSA1의 대체 제품
4개 제품을 찾았습니다.
관련 제품
6개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
제품 준수 증명서