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수량 | 가격 |
---|---|
1+ | ₩4,444 |
10+ | ₩3,418 |
25+ | ₩3,052 |
50+ | ₩2,954 |
100+ | ₩2,855 |
250+ | ₩2,743 |
500+ | ₩2,701 |
1000+ | ₩2,691 |
제품 정보
제품 개요
The IR2010SPBF is a high power high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200V. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3V Logic compatible
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Shut down input turns OFF both channels
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
애플리케이션
Motor Drive & Control
기술 사양
2Channels
High Side and Low Side
16Pins
Surface Mount
3A
10V
-40°C
95ns
-
MSL 3 - 168 hours
-
MOSFET
SOIC
Non-Inverting
3A
20V
125°C
65ns
-
No SVHC (21-Jan-2025)
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법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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