제품 정보
제품 개요
The IR21814SPBF is a high voltage high speed power MOSFET and IGBT Driver with an independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- Matched propagation delay for both channels
- Logic and power ground ±5V offset
- Lower di/dt gate driver for better noise immunity
- Output source/sink current capability 1.4/1.8A
애플리케이션
Power Management, Industrial
기술 사양
2Channels
High Side and Low Side
14Pins
Surface Mount
1.9A
10V
-40°C
180ns
-
MSL 3 - 168 hours
-
IGBT, MOSFET
SOIC
Non-Inverting
2.3A
20V
125°C
220ns
-
No SVHC (23-Jan-2024)
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법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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