페이지 인쇄
IRF60DM206
Power MOSFET, StrongIRFET™, N Channel, 60 V, 130 A, 2900 µohm, DirectFET ME, Surface Mount
이미지는 참고용으로만 제공됩니다. 자세한 내용은 제품 설명을 참조하세요.
제품 정보
제조업체INFINEON
제조업체 부품 번호IRF60DM206
주문 코드2781110
Product RangeStrongIRFET Series
AKASP001561876
기술 데이터 시트
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id130A
Drain Source On State Resistance2900µohm
Transistor Case StyleDirectFET ME
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation96W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeStrongIRFET Series
Qualification-
SVHCNo SVHC (17-Dec-2015)
IRF60DM206의 대체 제품
1개 제품을 찾았습니다.
제품 개요
IRF60DM206 is a DirectFET® N-channel power MOSFET. Application includes brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, DC/AC inverters.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dv/dt and di/dt capability
- Drain-to-source breakdown voltage is 60V (Min, VGS = 0V, ID = 250µA, TJ = 25°C)
- Static drain-to-source on-resistance is 2.2mohm (typ, VGS = 10V, ID = 80A, TJ = 25°C)
- Continuous drain current, VGS at 10V is 130A (max, ID at TC = 25°C)
- Gate-to-source forward leakage is 100nA/-100nA (max, VGS = 20V/VGS = -20V, TC = 25°C)
- Internal gate resistance is 0.8ohm (typ, TC = 25°C)
- Turn-on delay time is 17ns (typ, VDD = 30V, TJ = 25°C)
- DirectFET® ME package, operating junction and storage temperature range from -55 to +150°C
기술 사양
Channel Type
N Channel
Continuous Drain Current Id
130A
Transistor Case Style
DirectFET ME
Rds(on) Test Voltage
10V
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2900µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.7V
No. of Pins
8Pins
Product Range
StrongIRFET Series
MSL
MSL 1 - Unlimited
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:Malaysia
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (17-Dec-2015)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.000256