IRF7343TRPBF
Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
더 필요하세요?
| 수량 | 가격 |
|---|---|
| 1+ | ₩2,015 |
| 10+ | ₩1,346 |
| 100+ | ₩894 |
| 500+ | ₩731 |
| 1000+ | ₩589 |
| 5000+ | ₩578 |
제품 정보
제품 개요
The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Fully avalanche rated
애플리케이션
Industrial, Power Management
기술 사양
Complementary N and P Channel
55V
4.7A
0.043ohm
8Pins
2W
-
-
55V
4.7A
0.043ohm
SOIC
2W
150°C
-
No SVHC (21-Jan-2025)
IRF7343TRPBF의 대체 제품
1개 제품을 찾았습니다.
관련 제품
4개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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