제품 정보
제품 개요
The IRF7389TRPBF is a HEXFET power MOSFET in 8 pin SOIC package. This dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Complimentary half bridge
- Fully avalanche rated
- 30V P channel and -30V N channel drain to source voltage
- 7.3A P channel and -5.3A N channel continues drain current
애플리케이션
Industrial, Power Management
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Complementary N and P Channel
30V
7.3A
0.023ohm
8Pins
2.5W
-
MSL 1 - Unlimited
30V
7.3A
0.023ohm
SOIC
2.5W
150°C
-
No SVHC (21-Jan-2025)
IRF7389TRPBF의 대체 제품
1개 제품을 찾았습니다.
관련 제품
4개 제품을 찾았습니다.
법률 및 환경
최종후의 중요 제조 공정이 이루어진 국가원산지:Philippines
최종후의 중요 제조 공정이 이루어진 국가
RoHS
RoHS
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