페이지 인쇄
IRF7907TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 11 A, 11 A, 0.0098 ohm
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제품 정보
제조업체INFINEON
제조업체 부품 번호IRF7907TRPBF
주문 코드2725920RL
Product RangeHEXFET Series
AKASP001566462
기술 데이터 시트
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id11A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel11A
On Resistance Rds(on)0.0098ohm
Continuous Drain Current Id P Channel11A
Drain Source On State Resistance N Channel0.0098ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.0098ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.8V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
제품 개요
Dual N-channel HEXFET® power MOSFET for POL converters in notebook computers, servers, graphics cards, game consoles and set-top box.
- Very low RDS(on) at 4.5V VGS
- Low gate charge
- Fully characterized avalanche voltage and current
- Improved body diode reverse recovery
- 100% tested for RG
경고
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
기술 사양
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
11A
Continuous Drain Current Id N Channel
11A
Continuous Drain Current Id P Channel
11A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.0098ohm
Drain Source On State Resistance N Channel
0.0098ohm
Drain Source On State Resistance P Channel
0.0098ohm
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
법률 및 환경
원산지:
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
최종후의 중요 제조 공정이 이루어진 국가원산지:China
최종후의 중요 제조 공정이 이루어진 국가
관세 번호:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 준수:예
RoHS
RoHS 프탈레이트 준수:예
RoHS
SVHC:No SVHC (21-Jan-2025)
제품 준수 증명서 다운로드
제품 준수 증명서
무게(kg):.00019